Electron beam processing device and method using carbon nanotube emitter
US8414787B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2010 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Jan 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.