Method of manufacturing semiconductor device and semiconductor device
US8415245B2 · kind B2 · utility
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1References
18Claims
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Assignee
Inventors
Key dates
| Filing date | Sep 9, 2010 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Jun 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/20753
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Height control of a capillary is performed in a stitch bonding (2nd bond) in a wire bonding, so that a thickness of a stitch portion can be controlled, thereby ensuring a bonding strength at the stitch portion and achieving an improvement in a bonding reliability. Also, the stitch portion has a thick portion, and a wire and a part (α portion) of a bonding region of an inner lead is formed to a lower portion of the thick portion, thereby sufficiently ensuring a thickness of the stitch portion and a bonding region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.