Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
US8415258B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2011 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Nov 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying at least two types of source gases into the process vessel, each of the at least two types of source gases containing the element, and (b) changing the layer containing the element by supplying reaction gas into the process vessel, the reaction gas being different from the at least two types of source gases; and unloading the processed substrate from the process vessel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.