Memristors with a switching layer comprising a composite of multiple phases
US8415652B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2010 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Jan 27, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.