Low resistance ultraviolet light emitting device and method of fabricating the same
US8415654B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2009 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Mar 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
A low resistance light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The ultraviolet light-emitting structure has a first layer having a first portion and a second portion of AlXInYGa(1-X-Y)N with an amount of elemental indium, the first portion surface being treated with silicon and indium containing precursor sources, and a second layer. When an electrical potential is applied to the first layer and the second layer the device emits ultraviolet light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.