Semiconductor device and method of manufacturing the same
US8415756B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2010 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | May 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
There are provided a semiconductor device in which short circuit failures in magnetic resistor elements and the like are reduced, and a method of manufacturing the same. An interlayer insulating film in which memory cells are formed is formed such that the upper surface of the portion of the interlayer insulating film located in a memory cell region where the magnetic resistor elements are formed is at a position lower than that of the upper surface of the portion of the interlayer insulating film located in a peripheral region. Another interlayer insulating film is formed so as to cover the magnetic resistor elements. In the another interlayer insulating film, formed are bit lines electrically coupled to the magnetic resistor elements. Immediately below the magnetic resistor elements, formed are digit lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.