Cross quadrupole double lithography method and apparatus for semiconductor device fabrication using two apertures
US8416393B2 · kind B2 · utility
2Cited by
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19Claims
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Key dates
| Filing date | Apr 2, 2009 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Jun 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/302
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a lithography system operation to include a first aperture or a second aperture. Each of the first and second apertures has two pairs of radiation-transmitting regions where one pair of radiation-transmitting regions are larger than a second pair. For an aperture, each pair of radiation-transmitting regions are on different diametrical axis. In an embodiment, one aperture is used for x-dipole illumination and the second aperture is used for y-dipole illumination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.