Reverse connection MTJ cell for STT MRAM
US8416600B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2009 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Aug 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.