Phase change memory device and method for manufacturing the same
US8416616B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2011 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Jun 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase change memory device includes a silicon substrate having a bar-type active region and an N-type impurity region formed in a surface of the active region. A first insulation layer is formed on the silicon substrate, and the first insulation layer includes a plurality of first contact holes and second contact holes. PN diodes are formed in the first contact holes. Heat sinks are formed in the first contact holes on the PN diodes, and contact plugs fill the second contact holes. A second insulation layer having third contact holes is formed on the first insulation layer. Heaters fill the third contact holes. A stack pattern of a phase change layer and a top electrode is formed to contact the heaters. The heat sink quickly cools heat transferred from the heater to the phase change layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.