High-k dielectric material and methods of forming the high-k dielectric material
US8420208B2 · kind B2 · utility
6Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Dec 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a high-k dielectric material including forming at least two portions of titanium dioxide, the at least two portions of titanium dioxide comprising a first portion comprising amorphous titanium dioxide and a second portion comprising rutile titanium dioxide. A method of forming a high-k dielectric material including forming a first portion of titanium dioxide at a temperature of from about 150° C. to about 350° C. and forming a second portion of titanium dioxide at a temperature of from about 350° C. to about 600° C. A high-k dielectric material is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.