Ion implantation fabrication process for thin-film crystalline silicon solar cells
US8420435B2 · kind B2 · utility
5Cited by
64References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Dec 27, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A front contact thin-film solar cell is formed on a thin-film crystalline silicon substrate. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation processes. In yet another embodiment, a back contact thin-film solar cell is formed on a thin-film crystalline silicon substrate. Emitter regions, selective emitter regions, base regions, and a front surface field are formed through ion implantation processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.