Backside illuminated image sensor
US8420438B2 · kind B2 · utility
8Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Dec 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.