Semiconductor device and method for manufacturing the same
US8420467B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2011 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Sep 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/751
Abstract
A semiconductor device has a semiconductor substrate, a semiconductor fin which is formed on the semiconductor substrate, which has a long side direction and a short side direction, and which has a carbon-containing silicon film including an impurity and a silicon film formed on the carbon-containing silicon film, a gate electrode which is formed to face both side surfaces of the semiconductor fin in the short side direction, source and drain regions which are respectively formed in the semiconductor fin located in the direction of both sides in the long side direction of the semiconductor fin so as to sandwich the gate electrode, and an element isolation insulating film which is formed on the side surface of the semiconductor fin and between the gate electrode and the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.