Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof
US8420525B2 · kind B2 · utility
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32Claims
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Key dates
| Filing date | Jan 24, 2012 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Jan 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with vertical current flow includes a body having a substrate made of semiconductor material. At least one electrical contact on a first face of the body. A metallization structure is formed on a second face of the body, opposite to the first face. The metallization structure is provided with metal vias, which project from the second face within the substrate so as to form a high-conductivity path in parallel with portions of said substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.