Test structure for charged particle beam inspection and method for defect determination using the same
US8421009B2 · kind B2 · utility
82Cited by
5References
20Claims
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Key dates
| Filing date | Apr 8, 2009 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | May 26, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2884
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A test structure and method thereof for determining a defect in a sample of semiconductor device includes at least one transistor rendered grounded. The grounded transistor is preferably located at at least one end of a test pattern designed to be included in the sample. When the test structure is inspected by charged particle beam inspection, the voltage contrast (VC) of the transistors in the test pattern including the grounded transistor is observed for determination of the presence of defect in the sample.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.