High-beta bipolar junction transistor and method of manufacture
US8421124B2 · kind B2 · utility
1Cited by
1References
12Claims
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Key dates
| Filing date | Mar 15, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Jul 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
Abstract
An NPN bipolar junction transistor is disclosed that exhibits a collector-to-emitter breakdown voltage greater than 10 volts and a beta greater than 300. The large value of beta is obtained by fabricating the transistor with an extra N-type layer that reduces recombination of electrons and holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.