Back side illumination image sensor reduced in size and method for manufacturing the same
US8421134B2 · kind B2 · utility
7Cited by
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3Claims
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Key dates
| Filing date | Dec 22, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Dec 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
Abstract
A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.