Semiconductor device having super junction structure and method for manufacturing the same
US8421154B2 · kind B2 · utility
3Cited by
8References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 30, 2011 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Nov 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a super junction structure includes: multiple first columns extending in a current flowing direction; and multiple second columns extending in the current flowing direction. The first and second columns are alternately arranged in an alternating direction. Each first column provides a drift layer. The first and second columns have a boundary therebetween, from which a depletion layer expands in case of an off-state. At least one of the first columns and the second columns have an impurity dose, which is inhomogeneous by location with respect to the alternating direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.