DRAM cell utilizing floating body effect and manufacturing method thereof
US8422288B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Jun 14, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/4016
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a DRAM cell utilizing floating body effect and a manufacturing method thereof. The DRAM cell includes a P type semiconductor region provided on a buried oxide layer, an N type semiconductor region provided on the P type semiconductor region, a gate region provided on the N type semiconductor region, and an electrical isolation region surrounding the P type semiconductor region and the N type semiconductor region. A diode of floating body effect is taken as a storage node. Via a tunneling effect between bands, electrons gather in the floating body, which is defined as a first storage state; via forward bias of PN junction, electrons are emitted out from the floating body or holes are injected into the floating body, which is defined as a second storage state. The present invention provides a highly efficient DRAM cell utilizing floating body effect with high density, which has low power consumption, has simple manufacturing process, and is compatible to the conventional CMOS and conventional logic circuit manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.