Patent · US Active

Acceptance determining method of blank for EUV mask and manufacturing method of EUV mask

US8423926B2 · kind B2 · utility

1Cited by
2References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 20, 2011
Grant dateApr 16, 2013
Priority date
Expiry dateSep 20, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/70
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

According to one embodiment, an acceptance determining method of a blank for an EUV mask includes evaluating whether or not an integrated circuit device becomes defective, on the basis of information of a defect contained in a blank for an EUV mask and design information of a mask pattern to be formed on the blank. The integrated circuit device is to be manufactured by using the EUV mask. The EUV mask is manufactured by forming the mask pattern on the blank. And the blank is determined to be non-defective in a case that the integrated circuit device is not to be defective.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.