Acceptance determining method of blank for EUV mask and manufacturing method of EUV mask
US8423926B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2011 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Sep 20, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to one embodiment, an acceptance determining method of a blank for an EUV mask includes evaluating whether or not an integrated circuit device becomes defective, on the basis of information of a defect contained in a blank for an EUV mask and design information of a mask pattern to be formed on the blank. The integrated circuit device is to be manufactured by using the EUV mask. The EUV mask is manufactured by forming the mask pattern on the blank. And the blank is determined to be non-defective in a case that the integrated circuit device is not to be defective.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.