Chemically amplified positive resist composition for EB or EUV lithography and patterning process
US8426108B2 · kind B2 · utility
8Cited by
14References
5Claims
0Family size
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Key dates
| Filing date | Feb 15, 2011 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Jun 17, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P20/55
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemically amplified positive resist composition for EB or EUV lithography is provided comprising (A) a polymer or a blend of polymers wherein a film of the polymer or polymer blend is insoluble in alkaline developer, but turns soluble under the action of acid, (B) an acid generator, (C) a basic compound, and (D) a solvent. The basic compound (C) is a polymer comprising recurring units bearing a side chain having a secondary or tertiary amine structure as a basic active site and constitutes a part or the entirety of the polymer or polymers as component (A).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.