Mask pattern forming method, fine pattern forming method, and film deposition apparatus
US8426117B2 · kind B2 · utility
8Cited by
0References
17Claims
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Key dates
| Filing date | Sep 28, 2009 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | May 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.