Method for manufacturing a gate-control diode semiconductor memory device
US8426271B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2012 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Jun 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/68
Abstract
This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor storage device. When the floating gate voltage is relatively high, the channel under the floating gate is of n type and the device is of a simple gate-control pn junction structure; by controlling effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through the floating gate and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed. The quantity of charges in the floating gate determines the device threshold voltage, thus realizing the memory functions. This invention features capacity of manufacturing memory devices able to reduce the chip power consumption through advantages of high driving current and small sub threshold swing, is applicable to semiconductor memory devices manufacturing based on flexible substrates and flat panel displays and floating gate memories, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.