Micro thermoelectric device and manufacturing method thereof
US8426720B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2004 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | May 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
The present invention discloses a micro thermoelectric device and manufacturing method thereof, and the manufacturing method comprises the steps of providing a substrate and depositing a barrier layer on the substrate, using the barrier layer as a mask to etch a pattern on the barrier layer to form a plurality of openings, adopting a reactive ion etching (RIE) method to remove the barrier layer and smoothing the curvature of the corner of each groove, depositing a metal conductive wire layer, coating an adhesive layer in said each groove by a surface mount technology (SMT), placing a plurality of thermoelectric materials individually into each groove, repeating steps (a) to (f) to produce another substrate, and connecting the two substrates into an aligned position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.