Image sensor having supplemental capacitive coupling node
US8426796B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Sep 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/771
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a pixel array, a bit line, a supplemental capacitance node line, and a control circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells different from the first group. The control circuit is coupled to the supplemental capacitance node line to selectively increase the potential at the FD node of each of the pixel cells of the second group by selectively asserting a FD boost signal on the supplemental capacitance node line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.