Scaled-down phase change memory cell in recessed heater
US8426967B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2007 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Oct 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A semiconductor structure configurable for use as a nonvolatile storage element includes a first electrode, an insulating layer formed on at least a portion of an upper surface of the first electrode, and a pillar traversing the insulating layer and being recessed relative to an upper surface of the insulating layer. The pillar includes a heater formed on at least a portion of the upper surface of the first electrode and a collar formed on sidewalls of the insulating layer proximate the heater and on at least a portion of an upper surface of the heater. The structure further includes a PCM layer formed on at least a portion of the upper surface of the insulating layer and substantially filling a volume defined by the upper surface of the heater and at least a portion of an upper surface of the collar. A second electrode is formed on at least a portion of an upper surface of the phase change material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.