Memory component, memory device, and method of operating memory device
US8427860B2 · kind B2 · utility
6Cited by
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22Claims
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Key dates
| Filing date | Feb 1, 2011 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Jun 22, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.