Semiconductor storage device and control method thereof
US8427876B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 22, 2011 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Nov 21, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, there is provided a semiconductor storage device including: a memory cell array; a high voltage generator; and a controller that controls the high voltage generator. When a word line to is selected from word lines, the controller controls the high voltage generator to: apply a first read pass voltage to one or two first adjacent word lines adjacent to the selected word line; apply a second read pass voltage to a second adjacent word line adjacent to the first adjacent word lines, wherein the second read pass voltage is higher than the first read pass voltage; and apply a third read pass voltage to remaining word lines other than the selected word line, the first adjacent word line and the second adjacent word line, wherein the third read pass voltage is higher than the first read pass voltage and lower than the second read pass voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.