Patent · US Active

Self-aligned spacer multiple patterning methods

US8431329B2 · kind B2 · utility

19Cited by

2References

15Claims

0Family size

Assignee

Rohm and Haas Electronic Materials LLC · US

Inventors

Young Cheol Bae · Weston, US
Thomas Cardolaccia · Natick, US
Yi-Chen Liu · Hsinchu, TW

Key dates

Filing date	Jun 28, 2010
Grant date	Apr 30, 2013
Priority date	—
Expiry date	Apr 6, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0338
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Self-aligned spacer multiple patterning method are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.