IC device having low resistance TSV comprising ground connection
US8431481B2 · kind B2 · utility
1Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2012 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Apr 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes an integrated circuit (IC) die which is provided with a substrate with surfaces. At least one through substrate via (TSV) is formed through the substrate to a protruding integral tip that includes sidewalls and a distal end. A metal layer is formed on the bottom surface of the IC die, and the sidewalls and the distal end of the protruding integral tips. Completing fabrication of at least one functional circuit including at least one ground pad on the top surface of the semiconductor, wherein the ground pad is coupled to said TSV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.