Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
US8431490B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2010 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Apr 29, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula Iwherein R1, R2 and R3 are each independently selected from a C1-4 alky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; and, wherein at least some of the silicon oxide is removed from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.