Method for membrane protection during reactive ion/plasma etching processing for via or cavity formation in semiconductor manufacture
US8431491B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Oct 30, 2009 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | May 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for protecting a chuck membrane in a reactive ion etcher during plasma processing is described. The method utilizes a photoresist as a protective layer. Suitable photoresists can be used in this invention to not only image a semiconductor substrate to protect areas where vias and/or cavities are not desired during plasma processing but also to protect the chuck membrane(s) of the reactive ion etcher from being damaged and/or contaminated during plasma processing. Both negative-working and positive-working photoresists can be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.