Film formation method and film formation apparatus
US8431494B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2011 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Jun 20, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45523
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.