Photo-patternable dielectric materials and formulations and methods of use
US8431670B2 · kind B2 · utility
2Cited by
3References
24Claims
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Key dates
| Filing date | Aug 31, 2009 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Jun 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/0162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.