Method and structure of monolithetically integrated inertial sensor using IC foundry-compatible processes
US8432005B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 12, 2012 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Jun 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to integrating an inertial mechanical device on top of a CMOS substrate monolithically using IC-foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A thick silicon layer is added on top of the CMOS. A subsequent patterning step defines a mechanical structure for inertial sensing. Finally, the mechanical device is encapsulated by a thick insulating layer at the wafer level.Comparing to the incumbent bulk or surface micromachined MEMS inertial sensors, the vertically monolithically integrated inertial sensors have smaller chip size, lower parasitics, higher sensitivity, lower power, and lower cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.