Boost cell supply write assist
US8432764B2 · kind B2 · utility
20Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2010 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Jun 20, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/145
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of increasing a drain to source voltage measured at an access pass-gate to a SRAM circuit in a SRAM memory array, including increasing a low voltage from a low voltage source powering said SRAM circuit, and increasing a high voltage from a high voltage source powering the SRAM circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.