Patent · US Active

Methods of processing substrates having metal materials

US8435419B2 · kind B2 · utility

4Cited by

0References

18Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Guowen Ding · San Jose, US
Herrick Ng · Cupertino, US
Teh-Tien Sue · Milpitas, US
Benjamin Schwarz · Strohberg, DE
Zhuang Li · Kunshan, CN

Key dates

Filing date	Jan 27, 2011
Grant date	May 7, 2013
Priority date	—
Expiry date	Jun 22, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32137
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods of processing substrates having metal layers are provided herein. In some embodiments, a method of processing a substrate comprising a metal layer having a patterned mask layer disposed above the metal layer, the method may include etching the metal layer through the patterned mask layer; and removing the patterned mask layer using a first plasma formed from a first process gas comprising oxygen (O2) and a carbohydrate. In some embodiments, a two step method with an additional second process gas comprising chlorine (Cl2) or a sulfur (S) containing gas, may provide an efficient way to remove patterned mask residue.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.