Method and system for modifying photoresist using electromagnetic radiation and ion implantation
US8435727B2 · kind B2 · utility
3Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2010 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Mar 13, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.