Inventor · Ipswich, MA, US

Patrick M. Martin

22Patents
7h-index
38Co-inventors
69Inventor score

Filing activity: Sep 24, 1991 → Aug 3, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US5220157A Scrip controlled cash dispensing system Physics 20 Expired
US5508233A Global planarization process using patterned oxide Electricity 18 Expired
US8133804B1 Method and system for modifying patterned photoresist using multi-step ion implantation Electricity 16 Active
US9716012B2 Methods of selective layer deposition Electricity 12 Active
US8460569B2 Method and system for post-etch treatment of patterned substrate features Electricity 11 Active
US7894918B2 System for analyzing batch processes Physics 9 Active
US5635428A Global planarization using a polyimide block Electricity 7 Expired
US8912097B2 Method and system for patterning a substrate Electricity 5 Active
US8354655B2 Method and system for controlling critical dimension and roughness in resist features Electricity 5 Active
US8435727B2 Method and system for modifying photoresist using electromagnetic radiation and ion implantation Physics 3 Active
US7049034B2 Photomask having an internal substantially transparent etch stop layer Physics 3 Expired
US9340877B2 Method and system for modifying photoresist using electromagnetic radiation and ion implantation Physics 3 Active
US9406507B2 Utilization of angled trench for effective aspect ratio trapping of defects in strain relaxed heteroepitaxy of semiconductor films Electricity 2 Active
US8778603B2 Method and system for modifying substrate relief features using ion implantation Electricity 1 Active
US8974683B2 Method and system for modifying resist openings using multiple angled ions Physics 1 Active
US9767987B2 Method and system for modifying substrate relief features using ion implantation Electricity 0 Active
US8698109B2 Method and system for controlling critical dimension and roughness in resist features Electricity 0 Active
US9425027B2 Methods of affecting material properties and applications therefor Electricity 0 Active
US9799531B2 Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor films Electricity 0 Active
US8952344B2 Techniques for processing photoresist features using ions Physics 0 Active
US8937019B2 Techniques for generating three dimensional structures Electricity 0 Active
US10026613B2 Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor films Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.