Backside illumination sensor having a bonding pad structure and method of making the same
US8435824B2 · kind B2 · utility
17Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2011 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Jul 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure comprises a device substrate having a front side and a back side; an interconnect structure disposed on the front side of the device substrate; and a bonding pad connected to the interconnect structure. The bonding pad comprises a recessed region in a dielectric material layer; a dielectric mesa of the dielectric material layer interposed between the recessed region; and a metal layer disposed in the recessed region and on the dielectric mesa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.