Method of manufacturing semiconductor device
US8435876B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2011 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Nov 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a lower film including a cell region and a peripheral circuit region, forming a first sacrificial film on the lower film, the first sacrificial film having trenches in the cell region, forming a second sacrificial pattern on the first sacrificial film, the second sacrificial pattern having line-shaped patterns spaced apart from each other and crossing the trenches in the cell region, and the second sacrificial pattern covering a top surface of the first sacrificial film in the peripheral circuit region, and patterning the first sacrificial film to form upper holes in portions of the trenches exposed by the second sacrificial pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.