Copper interconnect formation

US8435887B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• Kabushiki Kaisha Toshiba · JP

Inventors

• James J. Kelly · Schenectady, US
• Takeshi Nogami · Schenectady, US
• Kazumichi Tsumura · Shinagawa, JP

Key dates

• Filing date: Jun 2, 2011
• Grant date: May 7, 2013
• Expiry date: Jun 16, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is a method which includes forming a copper interconnect within a trench or via in a substrate. Forming the copper interconnect includes forming a ruthenium-containing seed layer on a wall of the trench or via; forming a cobalt sacrificial layer on the ruthenium-containing layer before the ruthenium-containing seed layer being exposed to an environment that is oxidizing with respect to the seed layer; and contacting the cobalt sacrificial layer with a copper plating solution, the copper plating solution dissolving the cobalt sacrificial layer and plating out copper on the unoxidized ruthenium-containing seed layer. Alternatively, the ruthenium-containing seed layer may be replaced with platinum, tungsten nitride, titanium nitride or titanium or iridium. Further alternatively, the cobalt sacrificial layer may be replaced by tin, cadmium, copper or manganese.