ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device
US8436351B2 · kind B2 · utility
2Cited by
2References
16Claims
0Family size
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Key dates
| Filing date | Dec 15, 2010 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Apr 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8232
Abstract
A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.