Patent · US Active

Integrated circuits including air gaps around interconnect structures, and fabrication methods thereof

US8436473B2 · kind B2 · utility

5Cited by

11References

19Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Chii-Ping Chen · Hsinchu, TW
Chih-Hao Chen · Hsinchu, TW

Key dates

Filing date	Mar 5, 2010
Grant date	May 7, 2013
Priority date	—
Expiry date	Mar 23, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/16225
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit includes an interconnect structure at least partially disposed in at least one opening of a dielectric layer that is disposed over a substrate. At least one air gap is disposed between the dielectric layer and the interconnect structure. At least one first liner material is disposed under the at least one air gap. At least one second liner material is disposed around the interconnect structure. The at least one first liner material is disposed between the dielectric layer and at least one second liner material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.