IC device having low resistance TSV comprising ground connection

US8436475B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Rajiv Dunne · Sachse, US
• Gary P. Morrison · Garland, US
• Satyendra Singh Chauhan · Sugar Land, US
• Masood Murtuza · Sugar Land, US
• Thomas D. Bonifield · Dallas, US

Key dates

• Filing date: Apr 11, 2012
• Grant date: May 7, 2013
• Expiry date: Apr 11, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/30107
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes an integrated circuit (IC) die including a substrate, and a plurality of through substrate via (TSV) that extends through the substrate to a protruding integral tip and which is partially covered with a dielectric liner and partially exposed from the dielectric liner. A metal layer is on the bottom surface of the IC die physically connecting the plurality of TSVs and physically and electrically connected to connecting the first metal protruding tips of TSVs.