Fast measurement of X-ray diffraction from tilted layers

US8437450B2 · kind B2 · utility

Assignee

• Jordan Valley Semiconductors Ltd. · IL

Inventors

• John Leonard Wall · Durham, GB
• David N. Jacques · Lexington, US
• Boris Yokhin · Mashhad, IL
• Alexander Krokhmal · Haifa, IL
• Paul Ryan · New York, US
• Richard Thake Bytheway · Durham, GB
• David Berman · Rekhasim, IL
• Matthew Wormington · Littleton, US

Key dates

• Filing date: Dec 2, 2010
• Grant date: May 7, 2013
• Expiry date: Nov 7, 2031

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N23/207
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having multiple single-crystal layers, including at least a first layer and a second layer that is formed over and tilted relative to the first layer. The X-rays that are diffracted from each of the first and second layers are sensed simultaneously while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including at least a first diffraction peak due to the first layer and a second diffraction peak due to the second layer. The diffraction spectrum is analyzed so as to identify a characteristic of at least the second layer.