Atomic layer deposition encapsulation for acoustic wave devices
US8440012B2 · kind B2 · utility
6Cited by
10References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2011 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Sep 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02929
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Acoustic wave devices and methods of coating a protective film of alumina (Al2O3) on the acoustic wave devices are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the acoustic wave devices in a precisely controlled manner. Thus, the uniform film does not significantly distort the operation of the acoustic wave device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.