Method for selective etching
US8440092B2 · kind B2 · utility
2Cited by
2References
8Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 17, 2008 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Aug 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method and device for selectively etching a first material (4) relative to a second material (2), comprising a bath (11) of a solution capable of producing at least one chemical species for etching the first material (4) but not the second (2) and a system (12) for generating ultrasound at a frequency between 100 kHz and 3 MHz in the bath in order to produce cavitation bubbles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.