Francis Baillet
5Patents
1h-index
7Co-inventors
36Inventor score
Filing activity: Nov 7, 2002 → May 12, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8440092B2 | Method for selective etching | Electricity | 2 | Active |
| US7655091B2 | Formation of single-crystal silicon carbide | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7368297B2 | Method for forming catalytic sites at the surface of a support | Performing Operations; Transporting | 1 | Expired |
| US8828255B2 | Method for etching a material in the presence of a gas | Electricity | 0 | Active |
| US8828872B2 | Method for etching a material in the presence of solid particles | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.