Method of semiconductor processing
US8440513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2008 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Jul 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor that has a structure in which a work function controlling metal conductor is provided on a high dielectric insulation film, fine processing is performed without deteriorating a device. In a method of semiconductor processing, in which the semiconductor has an insulation film containing Hf or Zr formed on a semiconductor substrate and a conductor film containing Ti or Ta or Ru formed on an insulation film, and the conductor film is processed by using a resist formed on the conductor film under a plasma atmosphere, the resist is removed under the plasma atmosphere of gas that contains hydrogen and does not contain oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.